? silikron semiconductor c orporation 20 11 . 3.11 version: 1. 1 pa ge 1 of 5 ssf 60 14 a absolute maximum ratings parameter max. units i d @t c = 25 ? c continuous d rain c urrent,vgs@10v 60 a i d @t c = 1 0 0 ? c continuous d rain c urrent,vgs@10v 42 i dm pulsed d rain c urrent 240 p d @t c = 2 5 ? c power d issipation 11 5 w linear d erating f actor 0.74 w / ? c v gs gate - to - source v oltage 20 v e as single p ulse a valanche e nergy 2 35 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C 5 5 to +1 75 ? c thermal resistan ce parameter min. typ. max. units r jc junction - to - case 1. 31 ? c/w r ja junction - to - a mbient 62 electrical characteristics @tj=25 ? c ( unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain - to - source b reakdown v oltage 60 v v gs =0v,i d =250a r ds(on) static drain - to - source o n - resistance 12 1 4 m v gs =10v,i d = 3 0 a v gs(th) gate t hreshold v oltage 2.0 4.0 v v ds =v gs ,i d =250a g fs forward t ransconductance 60 s v ds = 5 v,i d = 30 a i dss drain - to - source l eakage current 2 a v ds = 60 v ,v gs =0v 1 0 v ds = 60 v , v gs =0v,t j =1 5 0 ? c i gss gate - to - source f orward leakage 100 na v gs =20v gate - to - source r everse leakage - 100 v gs = - 20v ssf 6 014 a top view ( d2pak ) id = 60 a bv= 60 v rdson= 1 4 m ? advanced trench process technology ? a valanche e nergy , 100% test ? fully characterized a valanche voltage and current description: the ssf 6 014 a is a new generation of middl e voltage and high current n C channel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability . ssf 6 014 a is assembled in high reliability and qualified assembly house. application: ? p ow er switching application
? silikron semiconductor c orporation 20 11 . 3.11 version: 1. 1 pa ge 2 of 5 ssf 60 14 a q g total g ate c harge 4 5 nc i d =30a v dd =30v v gs =10v q g s gate - to - source charge 4 q gd gate - to - drain("miller") charge 15 t d(on) turn - on d elay t ime 1 4.6 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v t r rise t ime 1 4.2 t d(off) turn - off d elay t ime 40 t f fall t ime 7.3 c iss input c apacitance 1480 pf v gs =0v v ds =25v f=1.0mhz c oss output c apacitance 190 c rss reverse t ransfer c apacitance 135 source - drain ratings and characteristic s parameter min. typ. max. units test conditions i s continuous source current (body diode) 60 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current (body diode) 240 v sd diode forward voltage 1. 3 v t j = 2 5 ? c,i s = 40 a,v gs =0v t rr reverse recovery time 33 ns t j = 2 5 ? c,i f = 60 a di/dt=100a/s q rr reverse recovery charge 61 nc t on forward turn - on time intrinsic turn - on time is negligible (turn - on is dominated by ls + ld) gate charge t est c ircuit: eas test c ircuit: notes: repetitive rating; pu lse width limited by m ax junction temperature. t est condition: l =0. 3 mh, vdd = 30 v ,id=37a pulse width300s , duty cycle1.5% ; rg = 25 ?? starting tj = 25c v d d r l r g 1 m a v g s v d d b v d s s l r g
? silikron semiconductor c orporation 20 11 . 3.11 version: 1. 1 pa ge 3 of 5 ssf 60 14 a transfer characteristic cap ac i tance on resi stance vs. junction temperature breakdown voltage vs. junction temperature switch waveforms: switch time test circuit
? silikron semiconductor c orporation 20 11 . 3.11 version: 1. 1 pa ge 4 of 5 ssf 60 14 a gate charge source - drain diode forward voltage safe operation area max drain c urrent vs. junction temperature transient thermal impedance curve
? silikron semiconductor c orporation 20 11 . 3.11 version: 1. 1 pa ge 5 of 5 ssf 60 14 a d2 - pak mechanical data:
|
